Magnetoresistance due to edge spin accumulation

Because of spin-orbit interaction, an electrical current is accompanied by a spin current resulting in spin accumulation near the sample edges. Due again to spin-orbit interaction this causes a small decrease of the sample resistance. An applied magnetic field will destroy the edge spin polarization leading to a positive magnetoresistance. This effect provides means to study spin accumulation by electrical measurements. The origin and the general properties of the phenomenological equations describing coupling between charge and spin currents are also discussed.Comment: 4 pages, 3 figures. Minor corrections corresponding to the published versio

"Phase Diagram" of the Spin Hall Effect

We obtain analytic formulas for the frequency-dependent spin-Hall conductivity of a two-dimensional electron gas (2DEG) in the presence of impurities, linear spin-orbit Rashba interaction, and external magnetic field perpendicular to the 2DEG. We show how different mechanisms (skew-scattering, side-jump, and spin precession) can be brought in or out of focus by changing controllable parameters such as frequency, magnetic field, and temperature. We find, in particular, that the d.c. spin Hall conductivity vanishes in the absence of a magnetic field, while a magnetic field restores the skew-scattering and side-jump contributions proportionally to the ratio of magnetic and Rashba fields.Comment: Some typos correcte

Spin Distribution in Diffraction Pattern of Two-dimensional Electron Gas with Spin-orbit Coupling

Spin distribution in the diffraction pattern of two-dimensional electron gas by a split gate and a quantum point contact is computed in the presence of the spin-orbit coupling. After diffracted, the component of spin perpendicular to the two-dimensional plane can be generated up to 0.42 $\hbar$. The non-trivial spin distribution is the consequence of a pure spin current in the transverse direction generated by the diffraction. The direction of the spin current can be controlled by tuning the chemical potential.Comment: 9 page

Dyakonov-Perel spin relaxation near metal-insulator transition and in hopping transport

In a heavily doped semiconductor with weak spin-orbital interaction the Dyakonov-Perel spin relaxation rate is known to be proportional to the Drude conductivity. We argue that in the case of weak spin-orbital interaction this proportionality goes beyond the Drude mechanism: it stays valid through the metal-insulator transition and in the range of the exponentially small hopping conductivity.Comment: 3 page